Form 9.B Project Summary

Chron:

970700

Proposal Number:

23.02-1859

Project Title:

New Ultra-Shallow Junction Technology

and Improved Oxides for Silicon

Technical Abstract (Limit 200 words)

The performance of silicon radiation detectors is

strongly dependant on having a shallow rectifying

junction which is characterized by a small dead laer,

a high barrier height, high break down voltage and

low leakage current. This project will develop a

radiacal new approach to diffused junction

technology which shows promise for fabricating

ultra-shallow junctions with excellent electrical

properties. It will also develop this same technology

for producing uniform, high sheet resistance layers

for fabrication of on-wafer, high-value resistors for

segmented detector applications. In addition, we

propose to use nonoengineering surface processes

to develop a new technology for thermal oxide

passivation. We expect these new passivations to

have superior edge breakdown characteristics and

low leakage currents so that deep depletion

detectors can be fabricated without the need for

complicated guard ring structures. We also expect

these new oxides to have superior resistance to

ionizing radiation damage.

Potential Commercial Applications (Limit 200 words)

The technologies which we propose to develop are

fundamental to all classes of Si radiation sensors

and if successful should have a major impact on the

performance and fabrication cost of a broad range

of radiation detector products. Additionally, the

ultra-shallow junction technology may make a major

contribution to the general field of sub-micron

device fabrication.

Name and Address of Principal Investigator (Name,

Organization Name, Mail Address, City/State/Zip)

John Walter

IntraSpec, Inc.

1008 Alvin Weinberg Drive

Oak Ridge , TN 37830

Name and Address of Offeror (Firm Name, Mail Address,

City/State/Zip)

John Walter

IntraSpec, Inc.

1008 Alvin Weinberg Drive

Oak Ridge , TN 37830