Transient Radiation Effects in Silicon CCDs

Project Title:

08.05-0333
Transient Radiation Effects in Silicon CCDs
Scientific Research Associates, Inc.
P.O. Box 498
Glastonbury
CT
06033
Weinberg
Bernard C.
203-659-0333
50088
29281
 	NASA
Center:GSFC
The transient behavior of a silicon charge coupled device (CCD) and its response
to incident radiation has been studied, due to recent analytical and hardware studies
identifing the potentially significant benefits (i.e. reduced Psuedonoise (PN) Code
Acquisition time) that may be achieved via the application of Charge Coupled Device
(CCD) PN matched filters (PNMF).  While increasing data are being presented to suggest
CCD/PNMF viability for ground-based applications, there is concern as to the CCD
viability for on-board spacecraft applications with respect to radiation sensitivity.
 This technique solves the governing drift and diffusion equations coupled to Poisson's
equation by an efficient numerical procedure.  An innovative aspect of this aproach
is the use of a wide-band heterojunction formulation for the Si/Si02 interface. 
A three-phase coplanar layered buried channel charge coupled device has demonstrated
the fesibility. Solutions of the approach have been obtained for the steady state
static and transient transfer modes of operation.  In addition, an incident ionizing
radiation track simulation has been conducted and and an "early time" solution obtained.
 The method developed is also applicable to surface channel charged coupled devices.
Project Title:

Abstract:
