Proposal Number:          21-1- Z1.06-2388

          

          

   

Subtopic Title:
      Radiation-Tolerant High-Voltage, High-Power Electronics

          

          

   

Proposal Title:
      Radiation-Tolerant High-Voltage, High-Power Electronics WBG Drain Engineered Transistor

          

          

   

Firm:

          

IceMOS Technology Corporation

          

   

Address:

          

5749 East Cheney Drive, Paradise Valley, AZ 85253

          

   

Phone:

          

(602) 561-9427                                                                                                                                                                                

          

   

Name:

          

Samuel Anderson

          

   

E-mail:

          

samuelanderson@Icemostech.com

          

   

Address:

          

5749 East Cheney Drive, AZ 85253 - 3078

          

   

Phone:

          

(602) 561-9427                                                                                                                                                                                

          

   

Name:

          

Mr. Raymond Wiley

          

   

E-mail:

          

RAYMONDWILEY@ICEMOSTECH.COM

          

   

Address:

          

10260 East White Feather Lane, Unit 2043, AZ 85262 - 4675

          

   

Phone:

          

(480) 221-7731                                                                                                                                                                                

          

   

Estimated Technology Readiness Level (TRL) :                                                                                                                                                          
Begin: 1
End: 4

          

          

     

Technical Abstract (Limit 2000 characters, approximately 200 words):

In this project, we propose a 1200 Volt Silicon super-junction power transistor with a Silicon-

Carbide engineered drain to take advantage of the low on resistance performance from Wide Band Gap

(WBG) materials. By further merging high volume Micro-Electro-Mechanical Systems (MEMS)

manufacturing techniques to enable structures robust to harsh space radiation environments a new class of

vertical-power transistors are created. The merger of SJMOS structures-MEMS manufacturing techniques-

WBG material creates SMW concepts enabling devices that in this case have the potential to sustain 1200V

blocking with no heavy-ion-induced permanent destructive effects upon exposure to high energy radiation of

87 Mev-cm²/mg while delivering Rdson of 90milliohms at ID max = 40A. IceMOS will partner with the

School of Earth and Space Exploration at ASU to develop and demonstrate a novel SMW

Silicon-Carbide Drain Engineered rad-hard super-junction Transistor. 

 

Phase I of the project will include design modeling, device simulation and analysis of SJMOS structures

embedded in hetro-junction Si/Si C material to create a Silicon-Carbide WBG drain. This SMW concept

device will be designed to block 1200V with low on-resistance. Additionally, several radiation hardening

techniques applied to the Silicon super-junction structure and Si/Si C hetro-junction substrate to enhance

SEE and TID performance will be investigated. A 1200V SJMOS baseline device will be fabricated and

characterized for radiation effects.

 

In Phase II with the physical mechanisms limiting heavy-ion-induced permanent destructive effects upon

exposure to high energy radiation of 87 Mev-cm²/mg now understood from phase I and addressed, a

device designed to be capable of 1200V blocking and high current handling (40A) will be fabricated. and

prototypes tested to demonstrate potential Rdson of 90 milliohms for improved power system efficiency.

Targeted radiation hardness performance is SEE = 87 Mev-cm2/mg and TID = 300 Krads for this device.

          

          

     

Potential NASA Applications (Limit 1500 characters, approximately 150 words):

High voltage power distribution on spacecraft allows designers to eliminate power conversion components, which would significantly reduce spacecraft volume and weight. Such power distribution systems require enabling innovative products for increasing operational lifetime, radiation tolerance, and reliability in the extreme space environment, the proposed SMW Transistor is novel device that will lead to smaller, lighter weight and more efficient power supplies for space systems. 

 

          

          

     

Potential Non-NASA Applications (Limit 1500 characters, approximately 150 words):

Power electronic systems must be efficient, compact, and less costly to meet society’s increasing demand in energy conservation. The key technology that delivers the performance required by spacecraft power systems is SMW Transistor.  Commercial applications for these SMW devices include LED Lighting, AC/DC power stages in Data Centers Servers for Cloud Computing and Fast Battery Charging for EV.

          

          

     

Duration:     6