NASA SBIR 2008 Solicitation

FORM B - PROPOSAL SUMMARY


PROPOSAL NUMBER: 08-2 S1.02-9783
PHASE 1 CONTRACT NUMBER: NNX09CD41P
SUBTOPIC TITLE: Active Microwave Technologies
PROPOSAL TITLE: A 10kWatt 36GHz Solid-State Power Amplifier using GaN-on-Diamond

SMALL BUSINESS CONCERN (Firm Name, Mail Address, City/State/Zip, Phone)
Group4 Labs, LLC
1600 Adams Drive, Suite 112
Menlo Park, CA 94025 - 1449
(408) 887-6682

PRINCIPAL INVESTIGATOR/PROJECT MANAGER (Name, E-mail, Mail Address, City/State/Zip, Phone)
FELIX EJECKAM
FELIX.EJECKAM@GROUP4LABS.COM
1600 Adams Drive, Suite 112
Menlo Park, CA 94025 - 1449
(408) 887-6682

Expected Technology Readiness Level (TRL) upon completion of contract: 7 to 8

TECHNICAL ABSTRACT (Limit 2000 characters, approximately 200 words)
This Phase-II SBIR proposal proposes for the first time ever, the use of a new class of materials - Gallium Nitride-on-diamond - in the manufacture of very high power, high-temperature, Ka-band solid-state MMICs. In this particular Phase-II, the first ever 34-38GHz GaN-on-Diamond FETs will be demonstrated, exhibiting a record 5-10 W/mm at record efficiency and temperature levels. Arrays of these FETs will be used to form (power combined) 10KWatt Power Amplifiers (PA) MMICs. Polycrystalline free standing CVD diamond – nature's most efficient thermal conductor – enables nearly perfect heat extraction from a "hot" device (Thermal conductivities of GaAs, Si, and SiC are 35W/m/K, 150W/m/K and 390W/m/K respectively; diamond ranges from 1200-2000 W/m/K depending on quality). In the proposed scheme, the device's active epitaxial layers are removed from their original substrate and transferred to a specially treated low-cost CVD diamond substrate using a proprietary low-cost manufacturable scheme. The active junction rests just 20-nm from diamond. The semiconductor-on-diamond technology proposed here may be applied to GaAs, SiC, SiGe, etc. at up to 8" in wafer diameter.

POTENTIAL NASA COMMERCIAL APPLICATIONS (Limit 1500 characters, approximately 150 words)
2-10KW Ka-band (34-36GHz) solid-state Power Amplifiers for use in the manufacture radar equipment. Radar may be used in SWOT, GLISTIN, clouds and precipitation studies

POTENTIAL NON-NASA COMMERCIAL APPLICATIONS (Limit 1500 characters, approximately 150 words)
GaN-on-Diamond Power Amplifiers may be used for Base-stations (3G and WiMax). Also, GaN-on-Diamond wafers ay be used for blue/white LEDs (displays), and Laser Diodes (storage, DVD, litho).

NASA's technology taxonomy has been developed by the SBIR-STTR program to disseminate awareness of proposed and awarded R/R&D in the agency. It is a listing of over 100 technologies, sorted into broad categories, of interest to NASA.

TECHNOLOGY TAXONOMY MAPPING
Ablatives
Airport Infrastructure and Safety
Attitude Determination and Control
Ceramics
Composites
Computational Materials
Computer System Architectures
Cooling
Guidance, Navigation, and Control
High-Energy
Highly-Reconfigurable
Large Antennas and Telescopes
Laser
Microwave/Submillimeter
Multifunctional/Smart Materials
On-Board Computing and Data Management
Optical
Optical & Photonic Materials
Photonics
Power Management and Distribution
RF
Radiation Shielding Materials
Radiation-Hard/Resistant Electronics
Renewable Energy
Reuseable
Semi-Conductors/Solid State Device Materials
Sensor Webs/Distributed Sensors
Spaceport Infrastructure and Safety
Substrate Transfer Technology
Telemetry, Tracking and Control
Thermal Insulating Materials
Ultra-High Density/Low Power
Wireless Distribution


Form Generated on 08-03-09 13:26