NASA SBIR 2005 Solicitation

FORM B - PROPOSAL SUMMARY


PROPOSAL NUMBER:05 X1.01-7753
SUBTOPIC TITLE:In-Space Computing and Reconfigurable Electronics
PROPOSAL TITLE:A Non-Volatile SRAM For Spaceborne Applications Using a Novel Ferroelectric Non-Linear Dielectric

SMALL BUSINESS CONCERN (Firm Name, Mail Address, City/State/Zip, Phone)
Structured Materials Industries Inc
201 Circle Drive North, Suite 102/103
Piscataway ,NJ 08854 - 3723
(732) 302 - 9274

PRINCIPAL INVESTIGATOR/PROJECT MANAGER (Name, E-mail, Mail Address, City/State/Zip, Phone)
Joe D Cuchiaro
jcuchiaro@aol.com
201 Circle Drive North, Suite 102/103
Piscataway, NJ  08854 -3723
(719) 260 - 9589

TECHNICAL ABSTRACT (LIMIT 200 WORDS)
A ferroelectric non-linear dielectric was recently discovered that, in their film form, possess a number of properties that make it an excellent choice for radiation-hardened electronics, particularly a radiation hardened (total dose hardened and SEE immune) non-volatile (NV) static random access memory (SRAM). Electrical measurements of these films demonstrated a relatively low dielectric constant (~20), an inherent ability to form a native buffer layer when deposited directly on silicon, and a strong polarization hysteresis effect. These results indicate that this film may be used to replace the two n-channel and two p-channel transistors in a traditional 4-T SRAM latch cell with two n-channel and two p-channel non-linear dielectric field effect transistors (NLDFETs). The threshold voltage hysteresis effect of the NLDFET should achieve full SEU immunity to at least 80MeV-cm2/mg of ionizing radiation, when used in a standard 6-transistor SRAM cell structure, thus have ultra-fast access times (like commercial SRAMs) while offering full non-volatility. In Phase I we will provide the device proof of concept, then in Phase II build a prototype memory. Phase III will see commercialization by licensing and sales. The resulting NV-SRAM products have the potential to be orders of magnitude faster than any existing EEPROM or FLASH devices because the nonlinear dielectric film forms a native dielectric with silicon giving the structure resistance to "wear-out" or "data-retention" problems. Finally, the SMI material is fully compatible with CMOS processing and has been accepted into major commercial silicon fabrication lines as a high-k dielectric for linear applications.

POTENTIAL NASA COMMERCIAL APPLICATIONS (LIMIT 150 WORDS)
Potential NASA Commercial applications include licensing of 6T SRAM technology to major semiconductor manufacturing companies, radiation hardened high-density SRAM 916 - 32M) and Non-Volatile embedded memory product that operate fast with state-of-the-art microprocessor speeds.

POTENTIAL NON-NASA COMMERCIAL APPLICATIONS (LIMIT 150 WORDS)
The commercial products derived from this program have the potential to be orders of magnitude faster than any existing EEPROM or FLASH devices because of the employment of the non-linear dielectric, which also give the structure resistance to "wear-out". Thus the technology can be broadly applied to slicon semiconductor devices in general.

NASA's technology taxonomy has been developed by the SBIR-STTR program to disseminate awareness of proposed and awarded R/R&D in the agency. It is a listing of over 100 technologies, sorted into broad categories, of interest to NASA.

TECHNOLOGY TAXONOMY MAPPING
Highly-Reconfigurable
On-Board Computing and Data Management
Radiation-Hard/Resistant Electronics
Semi-Conductors/Solid State Device Materials
Testing Facilities
Ultra-High Density/Low Power


Form Printed on 09-19-05 13:12