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Optimization of Silicon Carbide Production

Aerodyne Research, Inc.

Billerica, MA
 

Combining gas phase calculations with experimental observations of surface reactions into a predictive model to optimize chemical vapor deposition (CVD) of silicon carbide

• Developed a computer code to model epitaxial Beta-SiC growth in a chemical vapor disposition process
• A 2-D predictive model of Beta-SiC growth in a chemical vapor disposition reactor was delivered to NASA Glenn
• Co-authored a paper with Glenn comparing model with experimental results from Glenn

• Code was used in development of a methane arcjet for space propulsion
• Received $25K in development funding from the Navy and  $35K in commercial sales
• Computer models have application for improved high temperature electronic devices
• Work done under this SBIR project is still cited by researchers involved in SiC CVD modeling
• Received a related SBIR from Air Force Office of Scientific Research (AFOSR)

• The code was used by NASA Glenn to optimize production of single crystal semiconductors for high temperature electronic devices
• Results from this SBIR are still used by researchers involved in SiC CVD modeling
• Silicon carbide is an important electronic material for advanced aerospace applications that involve high temperature, high power and high frequency

 

 

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Curator: SBIR Support              6/16/05